It has very low ON resistance and no junction voltage drop when forward biased.MOSFETs do not have secondary breakdown area, their drain to source resistance has a positive temperature coefficient, so they tend to be self protective.
The gate is electrically isolated from the source, and while this provides the MOSFET with its high input impedance, it also forms a good capacitor. The MOSFET is a majority carrier device, and as the majority carriers have no recombination delays, the MOSFET achieves extremely high bandwidths and switching times. The Power MOSFET is the three terminal (Gate, Drain and Source), four layer (n + pn – n +), Unipolar ( only majority carriers in conduction) semiconductor device. In high power applications, the Double-diffused vertical MOSFET or VMOS is used which is simply known as Power MOSFET. The Conventional planar MOSFET has the restriction of handling the high power. 
A metal-oxide-semiconductor field-effect transistor(MOSFET) is developed by combining the areas of field-effect concept and MOS technology.
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